用于高可靠互连的等离子体表面相互作用的定量控制

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345698

K. Yatsuda, T. Tatsumi, K. Kawahara, Y. Enomoto, T. Hasegawa, K. Hanada, T. Saito, Y. Morita, K. Shinohara, T. Yamane

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引用次数: 1

摘要

开发了用于高可靠铜/低钾互连的等离子体技术。虽然制备了良好的双damascene轮廓，但用于蚀刻(和/或灰化)的等离子体没有得到充分优化，导致Cu和SiOCH表面降解，最终破坏了Cu和阻挡金属(BM)之间的界面。因此，我们明确了降解对互连可靠性的影响，并控制了等离子体中活性物质(CFx和O)的密度，以优化等离子体与材料表面之间的反应。因此，我们在超过40批次的90纳米节点Cu/低k互连中实现了高产量和高可靠性。

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Quantitative control of plasma-surface interactions for highly reliable interconnects

Plasma technologies for highly reliable Cu/low-k interconnects were developed. Although good dual damascene profiles were fabricated, insufficiently optimized plasma for etching (and/or ashing) degraded Cu and SiOCH surface, and corrupted the interface between Cu and barrier metal (BM) after all. Therefore, we clarified the effect of degradation in the interconnect reliabilities, and controlled the densities of reactive species (CFx and O) in the plasma to optimize the reactions between plasma and material surfaces. Consequently, we achieved high yield and high reliability for 90-nm-node Cu/low-k interconnects in over 40 lots.

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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