纳米结构硅有效线性和非线性光学响应的理论和实验研究

V. Vlad, A. Petris, T. Bazaru, M. Miu
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引用次数: 2

摘要

研究了硅基纳米结构的有效光学线性响应和有效光学三阶非线性响应。特别地,研究了晶体硅衬底上纳米多孔硅层的光学响应与填充率和光波长的关系。从Bruggeman的有效介质理论和Sellmeier的色散形式(对于硅)出发,我们推导了在可见光和近红外光谱范围内,描述有效光学线性和三阶非线性响应对填充分数和波长的依赖关系的简化公式。它们与反射率测量(在有效线性折射率的情况下)和反射强度扫描(在有效三阶非线性的情况下)得到的实验数据一致。此外,利用高重复频率飞射激光(波长为800 nm)的反射z扫描装置和一种新的区分电子和热非线性的方法,研究了周期性纳米图像化和非图像化绝缘体上硅(SOI)的电子和热非线性光学响应。纳米结构SOI的电子非线性响应比无图案SOI的电子非线性响应明显增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Theoretical and experimental study of the effective linear and nonlinear optical response of nano-structured silicon
We study the effective optical linear and the effective optical third-order nonlinear response of some Si based nano-structures. Particularly, the optical response of nano-porous silicon layers on crystalline silicon substrate, in function of fill fraction and light wavelength is investigated. Starting from Bruggeman's effective medium theory and Sellmeier's dispersion formalism (for silicon), we derive simplified formulae that describe the dependences of effective optical linear and third-order nonlinear response on both fill fraction and wavelength, in the spectral range covering visible and near-infrared. They are in agreement with the experimental data obtained from reflectivity measurement (in the case of effective linear refractive index) and by reflection intensity scan (in the case of effective third-order nonlinearity). Furthermore, the electronic and thermal nonlinear optical response of periodically nano-patterned and un-patterned silicon-on-insulator (SOI) is also studied using a reflection Z-scan setup with a high-repetition-rate femto-laser (at 800 nm wavelength) and a new procedure for discrimination between electronic and thermal nonlinearities. The electronic nonlinear response of nano-structured SOI is strongly enhanced in comparison with those of un-patterned SOI.
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