{"title":"厚石墨烯转移和RIE蚀刻芯片冷却","authors":"Woongkyu Choi, Jinwoo Jeong, K. Chun, B. D. Lee","doi":"10.1109/TENCON.2013.6719044","DOIUrl":null,"url":null,"abstract":"Thick graphene which was grown by Chemical Vapor Deposition(CVD) on Nickel substrate and had thickness range about 500nm ~ 1μm was transferred into Si wafer using Hot Pressing with Thermal Release Tape(TRT). After transferring thick graphene into Si wafer, Scotch tape peeling test and Raman spectrum analysis were conducted. Patterning of thick graphene was demonstrated by RIE process with O2, Ar gas. Thick graphene etch rate is about 100nm/min at a etching condition which is O2-70sccm, Ar-30sccm, chamber pressure-0.055Torr, RF power-150W.","PeriodicalId":425023,"journal":{"name":"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thick graphene transfer and RIE etching for chip cooling\",\"authors\":\"Woongkyu Choi, Jinwoo Jeong, K. Chun, B. D. Lee\",\"doi\":\"10.1109/TENCON.2013.6719044\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thick graphene which was grown by Chemical Vapor Deposition(CVD) on Nickel substrate and had thickness range about 500nm ~ 1μm was transferred into Si wafer using Hot Pressing with Thermal Release Tape(TRT). After transferring thick graphene into Si wafer, Scotch tape peeling test and Raman spectrum analysis were conducted. Patterning of thick graphene was demonstrated by RIE process with O2, Ar gas. Thick graphene etch rate is about 100nm/min at a etching condition which is O2-70sccm, Ar-30sccm, chamber pressure-0.055Torr, RF power-150W.\",\"PeriodicalId\":425023,\"journal\":{\"name\":\"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.2013.6719044\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.2013.6719044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thick graphene transfer and RIE etching for chip cooling
Thick graphene which was grown by Chemical Vapor Deposition(CVD) on Nickel substrate and had thickness range about 500nm ~ 1μm was transferred into Si wafer using Hot Pressing with Thermal Release Tape(TRT). After transferring thick graphene into Si wafer, Scotch tape peeling test and Raman spectrum analysis were conducted. Patterning of thick graphene was demonstrated by RIE process with O2, Ar gas. Thick graphene etch rate is about 100nm/min at a etching condition which is O2-70sccm, Ar-30sccm, chamber pressure-0.055Torr, RF power-150W.
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