{"title":"用开尔文探针力显微镜测量砷化镓探测器的电势","authors":"O. G. Kaztaev, V. Novikov, I. Ponomarev","doi":"10.1109/SIBCON.2009.5044849","DOIUrl":null,"url":null,"abstract":"The contact potential difference (CPD) and surface voltage drop (SVD) has been investigated on epitaxial detector p+-n−n+ — structures using Kelvin Probe Force Microscopy (SPFM). The structures were based on undoped n-GaAs layers. The nonuniform distribution of the CPD in n-GaAs layer has been obtained. Applied reverse bias drops on the three regions within n-GaAs layer.","PeriodicalId":164545,"journal":{"name":"2009 International Siberian Conference on Control and Communications","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Measurements of electric potential in GaAs detectors using Kelvin Probe Force Microscopy\",\"authors\":\"O. G. Kaztaev, V. Novikov, I. Ponomarev\",\"doi\":\"10.1109/SIBCON.2009.5044849\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The contact potential difference (CPD) and surface voltage drop (SVD) has been investigated on epitaxial detector p+-n−n+ — structures using Kelvin Probe Force Microscopy (SPFM). The structures were based on undoped n-GaAs layers. The nonuniform distribution of the CPD in n-GaAs layer has been obtained. Applied reverse bias drops on the three regions within n-GaAs layer.\",\"PeriodicalId\":164545,\"journal\":{\"name\":\"2009 International Siberian Conference on Control and Communications\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Siberian Conference on Control and Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON.2009.5044849\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Siberian Conference on Control and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2009.5044849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurements of electric potential in GaAs detectors using Kelvin Probe Force Microscopy
The contact potential difference (CPD) and surface voltage drop (SVD) has been investigated on epitaxial detector p+-n−n+ — structures using Kelvin Probe Force Microscopy (SPFM). The structures were based on undoped n-GaAs layers. The nonuniform distribution of the CPD in n-GaAs layer has been obtained. Applied reverse bias drops on the three regions within n-GaAs layer.
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