{"title":"晶体硅光伏器件建模与参数辨识","authors":"G. Yordanov, O. Midtgård, L. Norum","doi":"10.1109/ICCEP.2011.6036313","DOIUrl":null,"url":null,"abstract":"This paper tests the standard single-exponential model of the electrical characteristics of crystalline-Si photovoltaic devices, focusing on the (apparent) shunt current. Measured characteristics of illuminated polycrystalline-Si photovoltaic modules are modeled, and the apparent shunt current is analyzed. It is shown that an Ohmic-like behavior only takes place at voltages well below the maximum-power point. At higher voltages, the apparent shunt current quickly drops to negligible values. Modeling a crystalline-Si PV device with a fixed shunt resistance may therefore lead to underestimation of the maximum power exceeding 10% at certain irradiance levels.","PeriodicalId":403158,"journal":{"name":"2011 International Conference on Clean Electrical Power (ICCEP)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Modeling and parameter identification of crystalline silicon photovoltaic devices\",\"authors\":\"G. Yordanov, O. Midtgård, L. Norum\",\"doi\":\"10.1109/ICCEP.2011.6036313\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper tests the standard single-exponential model of the electrical characteristics of crystalline-Si photovoltaic devices, focusing on the (apparent) shunt current. Measured characteristics of illuminated polycrystalline-Si photovoltaic modules are modeled, and the apparent shunt current is analyzed. It is shown that an Ohmic-like behavior only takes place at voltages well below the maximum-power point. At higher voltages, the apparent shunt current quickly drops to negligible values. Modeling a crystalline-Si PV device with a fixed shunt resistance may therefore lead to underestimation of the maximum power exceeding 10% at certain irradiance levels.\",\"PeriodicalId\":403158,\"journal\":{\"name\":\"2011 International Conference on Clean Electrical Power (ICCEP)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Clean Electrical Power (ICCEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCEP.2011.6036313\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Clean Electrical Power (ICCEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCEP.2011.6036313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling and parameter identification of crystalline silicon photovoltaic devices
This paper tests the standard single-exponential model of the electrical characteristics of crystalline-Si photovoltaic devices, focusing on the (apparent) shunt current. Measured characteristics of illuminated polycrystalline-Si photovoltaic modules are modeled, and the apparent shunt current is analyzed. It is shown that an Ohmic-like behavior only takes place at voltages well below the maximum-power point. At higher voltages, the apparent shunt current quickly drops to negligible values. Modeling a crystalline-Si PV device with a fixed shunt resistance may therefore lead to underestimation of the maximum power exceeding 10% at certain irradiance levels.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
