一种效率提高300倍的FinFET LER VT变异性估计方案

Sabareesh Nikhil Chinta, S. Mittal, P. Debashis, U. Ganguly
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引用次数: 7

摘要

在本文中,我们提出了一种计算效率高的方法来评估亚20nm节点finfet中由于线边缘粗糙度(LER)引起的阈值电压(VT)变化。对于小于15nm的通道长度,阈值电压的可变性可以估计到很高的精度(误差<;10%),计算时间减少了300倍以上。该方法提供了一种快速、准确地从翅片图纹技术的LER参数中估计σVT的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A FinFET LER VT variability estimation scheme with 300× efficiency improvement
In this paper, we have proposed a computationally efficient method to evaluate threshold voltage (VT) variability due to Line Edge Roughness (LER) in sub-20nm node FinFETs. For channel lengths less than 15 nm, the variability in threshold voltage may be estimated to a great accuracy (error <; 10%) with a decrease in computation time of over 300×. The method thus proposed provides a fast and accurate way of estimating σVT from LER specifications of a fin patterning technology.
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