M. Malmkvist, E. Lefebvre, M. Borg, L. Desplanque, X. Wallart, G. Dambrine, S. Bollaert, J. Grahn
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Characterization of insulated-gate versus schottky-gate InAs/AlSb HEMTs
Fabrication and characterization of 225 nm gate-length InAs/AlSb HEMTs with excellent RF performance are reported. We show the importance of an insulating layer between the gate and the semiconductor to improve gm, fT and fmax, and most important from a noise perspective, the gate-leakage current IG. By using an insulated-gate, IG was reduced by two orders of magnitude. The insulated-gate HEMTs exhibited extrinsic fT and fmax of 155 GHz and 115 GHz, respectively, at VDS=0.5 V.
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