老化前后SiC MOSFET降压变换器传导EMI的仿真

2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT) Pub Date : 2017-07-01 DOI:10.1109/DT.2017.8012095

Shawki Douzi, M. Tlig, J. Ben Hadj Slama, M. Kadi

{"title":"老化前后SiC MOSFET降压变换器传导EMI的仿真","authors":"Shawki Douzi, M. Tlig, J. Ben Hadj Slama, M. Kadi","doi":"10.1109/DT.2017.8012095","DOIUrl":null,"url":null,"abstract":"Because of switching conditions, the SiC MOSFET (Silicon Carbide MOSFET) always remains a critical device in static converters. Its reliability is still a challenge which requires more investigation. This paper studies the accelerated aging effect on the conducted electromagnetic-interference evolution in the N Channel SiC MOSFETs. Simulations are carried out by modifying parameters of the SiC transistor. This modification emulates the aging of the SiC MOSFET used in the buck converter circuit (chopper series type). The conducted electromagnetic-interference evolution is analyzed and presented before and after aging tests in common and differential mode voltages.","PeriodicalId":426951,"journal":{"name":"2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of conducted EMI in SiC MOSFET buck converters before and after aging\",\"authors\":\"Shawki Douzi, M. Tlig, J. Ben Hadj Slama, M. Kadi\",\"doi\":\"10.1109/DT.2017.8012095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Because of switching conditions, the SiC MOSFET (Silicon Carbide MOSFET) always remains a critical device in static converters. Its reliability is still a challenge which requires more investigation. This paper studies the accelerated aging effect on the conducted electromagnetic-interference evolution in the N Channel SiC MOSFETs. Simulations are carried out by modifying parameters of the SiC transistor. This modification emulates the aging of the SiC MOSFET used in the buck converter circuit (chopper series type). The conducted electromagnetic-interference evolution is analyzed and presented before and after aging tests in common and differential mode voltages.\",\"PeriodicalId\":426951,\"journal\":{\"name\":\"2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DT.2017.8012095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DT.2017.8012095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

由于开关条件的限制，SiC MOSFET(碳化硅MOSFET)一直是静态变换器中的关键器件。它的可靠性仍然是一个挑战，需要更多的研究。本文研究了加速老化对N沟道SiC mosfet传导电磁干扰演化的影响。通过修改碳化硅晶体管的参数进行了仿真。这种修改模拟了降压转换电路(斩波系列型)中使用的SiC MOSFET的老化。分析了共模和差模电压老化试验前后的传导电磁干扰演变规律。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Simulation of conducted EMI in SiC MOSFET buck converters before and after aging

Because of switching conditions, the SiC MOSFET (Silicon Carbide MOSFET) always remains a critical device in static converters. Its reliability is still a challenge which requires more investigation. This paper studies the accelerated aging effect on the conducted electromagnetic-interference evolution in the N Channel SiC MOSFETs. Simulations are carried out by modifying parameters of the SiC transistor. This modification emulates the aging of the SiC MOSFET used in the buck converter circuit (chopper series type). The conducted electromagnetic-interference evolution is analyzed and presented before and after aging tests in common and differential mode voltages.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 7th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications (SETIT)

自引率

0.00%

发文量