{"title":"基于sic的同步升压变换器噪声特性实验评价","authors":"T. Ibuchi, T. Funaki","doi":"10.1109/EMCEUROPE.2018.8485126","DOIUrl":null,"url":null,"abstract":"Fast switching operation of Silicon carbide (SiC) power semiconductor devices could lead to cause electromagnetic interference (EMI) noise problem of high-voltage power converter. This report experimentally investigates dynamic characteristics of SiC MOSFET in a synchronous boost converter, and evaluates their characters as EMI noise source based on conducted noise measurement.","PeriodicalId":376960,"journal":{"name":"2018 International Symposium on Electromagnetic Compatibility (EMC EUROPE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Experimental Evaluation on Noise Characteristics in SiC-Based Synchronous Boost Converter\",\"authors\":\"T. Ibuchi, T. Funaki\",\"doi\":\"10.1109/EMCEUROPE.2018.8485126\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fast switching operation of Silicon carbide (SiC) power semiconductor devices could lead to cause electromagnetic interference (EMI) noise problem of high-voltage power converter. This report experimentally investigates dynamic characteristics of SiC MOSFET in a synchronous boost converter, and evaluates their characters as EMI noise source based on conducted noise measurement.\",\"PeriodicalId\":376960,\"journal\":{\"name\":\"2018 International Symposium on Electromagnetic Compatibility (EMC EUROPE)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Electromagnetic Compatibility (EMC EUROPE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMCEUROPE.2018.8485126\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Electromagnetic Compatibility (EMC EUROPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCEUROPE.2018.8485126","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental Evaluation on Noise Characteristics in SiC-Based Synchronous Boost Converter
Fast switching operation of Silicon carbide (SiC) power semiconductor devices could lead to cause electromagnetic interference (EMI) noise problem of high-voltage power converter. This report experimentally investigates dynamic characteristics of SiC MOSFET in a synchronous boost converter, and evaluates their characters as EMI noise source based on conducted noise measurement.
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