基于硅基Si3N4/SiO2波导的超宽带高耦合效率

T. Zhu, S. Veilleux, J. Bland-Hawthorn, M. Dagenais
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引用次数: 2

摘要

实验证明了一种超宽带耦合器,在1550 nm处具有96%的高耦合效率,在1450 nm至1650 nm处具有90%的高耦合效率。该耦合器还具有易于切割和横向3.8 μm和纵向3.6 μm的大校准公差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra-broadband High Coupling Efficiency Using a Si3N4/SiO2 waveguide on silicon
We demonstrate a coupler with an ultra-broadband high coupling efficiency of 96% at 1550 nm, and > 90% from 1450 nm to 1650 nm experimentally. The coupler also features ease of cleaving and large alignment tolerances of 3.8 μm horizontally and 3.6 μm vertically.
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