{"title":"介质材料作为纳米等离子体耦合器的比较研究","authors":"M. G. Saber, R. H. Sagor","doi":"10.1109/IEECON.2014.6925867","DOIUrl":null,"url":null,"abstract":"We present a novel ultra-compact nano-plasmonic coupler using aluminum gallium arsenide (AlGaAs) and silicon-germanium alloy (Si-Ge) as the coupling dielectric materials. The performance of these two materials has been analyzed using the finite-difference time-domain (FDTD) method. The parameters that we have analyzed are coupling efficiency, reflection coefficient, return loss and mismatch loss. At telecom wavelength an efficiency of 51% has been achieved when AlGaAs is used as the dielectric while for Si-Ge it is 48%. The presented structure also provides advantage in the fabrication process since it is a rectangular shaped waveguide having no tapering. The coupler can operate at a broad range of input signal wavelengths.","PeriodicalId":306512,"journal":{"name":"2014 International Electrical Engineering Congress (iEECON)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A comparative study of dielectric materials as nano-plasmonic couplers\",\"authors\":\"M. G. Saber, R. H. Sagor\",\"doi\":\"10.1109/IEECON.2014.6925867\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a novel ultra-compact nano-plasmonic coupler using aluminum gallium arsenide (AlGaAs) and silicon-germanium alloy (Si-Ge) as the coupling dielectric materials. The performance of these two materials has been analyzed using the finite-difference time-domain (FDTD) method. The parameters that we have analyzed are coupling efficiency, reflection coefficient, return loss and mismatch loss. At telecom wavelength an efficiency of 51% has been achieved when AlGaAs is used as the dielectric while for Si-Ge it is 48%. The presented structure also provides advantage in the fabrication process since it is a rectangular shaped waveguide having no tapering. The coupler can operate at a broad range of input signal wavelengths.\",\"PeriodicalId\":306512,\"journal\":{\"name\":\"2014 International Electrical Engineering Congress (iEECON)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Electrical Engineering Congress (iEECON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEECON.2014.6925867\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Electrical Engineering Congress (iEECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEECON.2014.6925867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comparative study of dielectric materials as nano-plasmonic couplers
We present a novel ultra-compact nano-plasmonic coupler using aluminum gallium arsenide (AlGaAs) and silicon-germanium alloy (Si-Ge) as the coupling dielectric materials. The performance of these two materials has been analyzed using the finite-difference time-domain (FDTD) method. The parameters that we have analyzed are coupling efficiency, reflection coefficient, return loss and mismatch loss. At telecom wavelength an efficiency of 51% has been achieved when AlGaAs is used as the dielectric while for Si-Ge it is 48%. The presented structure also provides advantage in the fabrication process since it is a rectangular shaped waveguide having no tapering. The coupler can operate at a broad range of input signal wavelengths.