Role of Underlap Structure in Boosting the Performance of Band-to-Band Tunneling Carbon Nanotube FET with 5-nm Gate Length

In this paper, the performance of gate-all-around (GAA) band-to-band tunneling (BTBT) n-i-n carbon nanotube (CNT) field-effect transistor (FET) is improved using the underlap structure. The nanodevice is endowed with 5-nm gate length. The NEGF simulation is used to computationally assess the role of underlap design in improving 5-nm-GAA BTBT n-i-n CNTFETs. The simulation study has included the subthreshold swing, off-current, on-current, and current ratio. It has been found that the underlap design can be an efficient approach to boost such ultrascaled transistors. Recording a good maximum reachable current ratio and sub-thermionic subthreshold swing using a FET with 5-nm-gate length is a substantial result for the future nanoelectronics.