用于中功率射频应用的1.9 GHz低压CMOS功率放大器

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) Pub Date : 2000-06-10 DOI:10.1109/RFIC.2000.854430

A. Giry, J.-M. Fourniert, M. Pons

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引用次数: 34

摘要

本文介绍了一种以0.35 /spl μ l /m CMOS技术实现的单片两级射频功率放大器的设计方法和实测性能。在2.5 V电源下，实现了良好的线性度，在19 GHz下获得了23.5 dBm的输出功率，相关PAE为35%。所获得的性能为CMOS在中功率射频放大方面的潜力提供了深入的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 1.9 GHz low voltage CMOS power amplifier for medium power RF applications

This paper describes the design methodology and measured performances of a monolithic two-stage RF power amplifier realized in a 0.35 /spl mu/m CMOS technology. Under 2.5 V supply, good linearity is achieved and an output power of 23.5 dBm with an associated PAE of 35% is obtained at 19 GHz. The obtained performances give an insight into CMOS potentialities for medium power RF amplification.

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2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)

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