采用薄衬底的高消光比LN调制器，具有低半波电压和小啁啾

2017 22nd Microoptics Conference (MOC) Pub Date : 2017-11-01 DOI:10.23919/MOC.2017.8244483

Yuya Yamaguchi, A. Kanno, N. Yamamoto, T. Kawanishi, H. Nakajima

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引用次数: 4

摘要

本文从计算和实验两方面研究了薄衬底LN调制器的特性。利用薄LN衬底制备的有源y支路集成马赫-曾德尔调制器具有低半波电压1.23 V、啁啾参数0.013小、消光比44 dB等优良性能。

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High extinction ratio LN modulator with low half-wave voltage and small chirp by using thin substrate

We investigate the characteristics of LN modulator using thin substrate in both calculation and experiment. The fabricated active Y-branch integrated Mach-Zehnder modulator using thin LN substrate showed a good performance such as low half-wave voltage of 1.23 V, small chirp parameter of 0.013, and high extinction ratio of 44 dB.

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来源期刊

2017 22nd Microoptics Conference (MOC)

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