H. Xing, Guangle Zhou, Mingda Li, Yiqing Lu, Rui Li, M. Wistey, P. Fay, D. Jena, A. Seabaugh
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引用次数: 2
摘要
只提供摘要形式。在这次演讲中，我将回顾一些在巴黎圣母院隧道场效应晶体管(tfet)的最新发展[1-8]。隧道fet有望在2020年以后取代si - mosfet，因为它们有望在低电源电压(高达0.5 V)下实现离子> 100 uA/um的离子/ off > 103。到目前为止，我们已经分别展示了基于III-V异质结构的离子/ off ~ 106，离子~ 180 uA/um。未来的挑战包括静电控制、缺陷辅助隧道、界面态密度和寄生。最近，我们开始研究基于二维晶体的tfet，因为它们有望实现超尺度电子开关。
Summary form only given. In this talk, I will review some of the recent development of tunnel field effect transistors (TFETs) at Notre Dame [1-8]. Tunnel FETs are promising replacements of Si-MOSFETs beyond 2020 due to their promise to achieve Ion/Ioff > 103 with Ion > 100 uA/um at low supply voltages (up to 0.5 V). To date we have demonstrated Ion/Ioff ~ 106, Ion ~ 180 uA/um, separately, based on III-V heterostructures. Challenges ahead include electrostatic control, defect-assisted tunneling and interface state density and parasitics. More recently, we have started to investigate 2D crystal based TFETs for their promises to realize ultrascaled electronic switches.
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