硅上VO2薄膜半导体-金属相变过程中的异常光开关

2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics Pub Date : 2014-11-06 DOI:10.1109/METAMATERIALS.2014.6948577

G. Leahu, R. L. Voti, C. Sibilia, M. Bertolotti

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引用次数: 0

摘要

我们对沉积在硅片上的二氧化钒薄膜和多层Cu/VO2结构中的半导体到金属转变(SMT)进行了详细的红外研究。通过对透射率和反射率的分析，研究了这些结构在中红外(MIR)区域的结构。

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Anomalous optical switching during semiconductor-metal phase transition of VO2 films on Si

We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide film deposited on silicon wafer and in a multilayer Cu/VO2 Structure. All structures have been studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements.

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2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics

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