并联mosfet开关节点的实用设计框架

Rachit Pradhan, Mohamed I. Hassan, Alan Dorneles Callegaro, P. Suntharalingam, M. F. Cruz, A. Emadi
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引用次数: 2

摘要

随着电气化交通的发展,大功率电子子系统产生的大电流承载接口越来越多。这些接口处理的电流数量级以数百安培为单位,通常超出了单个电源开关的功率处理能力。为了管理这些高电流水平,与使用功率模块相比,分立开关并联是首选的做法,原因有两个;基于可用热接口的封装灵活性,并消除了过度设计解决方案的需要。虽然在MOSFET并联及其缓解技术方面的挑战已经在文献中得到了解决,但本文的重点是提出一个通用的框架,该框架可应用于任何具有并联MOSFET的开关节点的实际设计。利用这个设计框架的目的是减少修改硬件设计的风险,因为不符合电气和热机械方面的性能预期。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Framework for Practical Design of Switching Nodes with Parallel-Connected MOSFETs
The number of high current carrying interfaces originating from power-dense electronic sub-systems is increasing with the rise of electrified transportation. The order of magnitude of currents handled by these interfaces is in hundreds of amperes, and is generally beyond the power-handling capability of a single power switch. To manage these high current levels, discrete switch paralleling is a preferred practice compared to usage of power modules for two reasons; flexibility in packaging based on available thermal interfaces, and eliminating the need to over-design the solution. While the challenges in MOSFET paralleling and their mitigation techniques have been addressed in literature, this paper focuses on presenting a generalized framework that can be applied for the practical design of any switching node with parallel-connected MOSFETs. Utilizing this design framework aims to reduce the risk of revising hardware designs due to non-compliance with performance expectations on the electrical and thermo-mechanical fronts.
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