集成鳍线/微带配置的20 GHz场效应晶体管放大器

1988., IEEE MTT-S International Microwave Symposium Digest Pub Date : 1988-05-25 DOI:10.1109/MWSYM.1988.22145

J. Ruxton, R. Vahldieck, W. Hoefer

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引用次数: 3

摘要

介绍了一种采用鳍线和微带集成的20 ghz场效应管放大器的设计与制造。提出了一种宽带鳍线到微带的过渡。过渡包含一个偏置网络，以提供无条件的稳定性。单级放大器，包括转换，在1.25 ghz带宽上提供优于6db的增益。

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A 20 GHz FET amplifier in an integrated finline/microstrip configuration

A description is given of the design and fabrication of an 20-GHz FET amplifier that uses an integrated combination of finline and microstrip. A broadband finline-to-microstrip transition is presented. The transition incorporates a biasing network to provide unconditional stability. The single-stage amplifier, including transitions, provides better than 6-dB gain over a 1.25-GHz bandwidth.<>

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1988., IEEE MTT-S International Microwave Symposium Digest

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