0.5 ~ 5ghz微带线s参数反演集总元件等效电路模型

Jian Chen, Xi-Ming Li, R. Wu
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引用次数: 0

摘要

集总元件在微波等较高频率下工作时,其频率响应总是与理想元件不同,因此必须用等效电路对其进行建模。为了通过实验推导电路,我们将集总元件视为插入微带传输线进行测量的双端口网络。首先将网络建模为一般的PI电路,然后通过测量的s参数最终确定网络。将该方法应用于工作频率为0.5- 5ghz的表面贴装器件(SMD)电阻、变容二极管和光电晶体管。通过对电路s参数的模拟,验证了所建立的电路模型与实验结果的一致性。该方法为集总元件的电路建模提供了一种简单有效的方法,有助于集总元件在微波频率下的应用。具体来说,我们的电路模型显示了光电晶体管在不同照明下如何改变其响应,这为在光可调谐器件中使用它提供了一种方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Equivalent Circuit Model of Lumped Elements Retrieved from Measured S-Parameters of Microstrip Line in Frequency Range 0.5-5GHz
Lumped elements always show a different frequency response from ideal ones when they work at higher frequencies such as microwave band, therefore they have to be modeled by equivalent circuits. To derive the circuit by experiments, we considered the lumped elements as a two-port network which was inserted into a microstrip transmission line for measurements. The network was first modeled as a general PI circuit first, and then finalized by the measured S-parameters. The method was applied to a surface-mounted device (SMD) resistor, a varactor diode, and a phototransistor working at the frequencies of 0.5-5 GHz. The derived circuit models were verified by their simulated S-parameters, which were in a very good agreement with the experiments. Our method provides a simple and effective way to build circuit models for lumped elements, which is helpful for their applications at microwave frequency. Specifically, our circuit model shows how the phototransistor changes its response under different illumination, which provides a way to use it in light-tunable devices.
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