Resonant Tunnelling Diode Using Al-Se-Cu Thin Film Structure

Al-Se-Cu thin film was arranged on a glass substrate by thermal evaporation using vacuum coating unit. Three layers of different material were deposited on Glass substrate. I layer is Aluminium, II Layer is Selenium and III layer is Cu. Thickness of film is about ~200 nm. We propose to study the VI Characteristics of this film, the effect described without applied any external voltage PN junction will results in state of equilibrium. When electrical connections has been applied at the ends of both the N-type and the P-type materials and then connect them to a battery source, it cause energy source to overcome the potential barrier. Al-Se-Cu film results in forward current is found to be controlled by majority carrier tunnelling and negative differential resistance starts appearing which results maximum transition of electrons and results in decrease in current up to 4-5 V valley point of I-V curve and negative differential resistance observed is 0.64*10 ohms. This represents RTD (Resonant tunnelling diode) Structure.