二次电子产率的一般经验模型及其在金微孔表面蒙特卡罗模拟中的应用

2020 IEEE 21st International Conference on Vacuum Electronics (IVEC) Pub Date : 2020-10-19 DOI:10.1109/IVEC45766.2020.9520587

A. Iqbal, J. Ludwick, S. Fairchild, M. Cahay, D. Gortat, M. Sparkes, W. O'Neill, T. Back, Peng Zhang

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引用次数: 0

摘要

我们提出了一个二次电子产率(SEY)的一般经验模型，该模型成功地拟合了实验测量的平坦金表面上一次电子正入射和斜入射的SEY。将该经验模型应用于二维蒙特卡罗(MC)模拟中，以估计微孔表面的有效SEY减少。仿真结果与实验数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A General Empirical Model of Secondary Electron Yield and Its Application in Monte Carlo Simulation of a Microporous Gold Surface

We present a general empirical model of secondary electron yield (SEY), which successfully fits the experimentally measured SEY of a flat gold surface for both normal and oblique incidence of primary electrons. This empirical model is applied in a two-dimensional Monte Carlo (MC) simulation to estimate the effective SEY reduction of a microporous surface. The simulation results are in very good agreement with the experimental data.

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2020 IEEE 21st International Conference on Vacuum Electronics (IVEC)

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