基于冷场效应晶体管测量的去嵌入新技术

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282682

G. Pailloncy, J. Raskin

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引用次数: 7

摘要

在本文中，我们提出了一种新的去嵌入技术，它不需要任何专用的射频测试结构。这导致晶圆片上的表面积大大减少。此外，该技术使我们能够突破可能影响未来设备射频性能精度的再接触和色散问题

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New de-embedding technique based on Cold-FET measurement

In this paper, we present a new de-embedding technique which does not require any dedicated RF test structure. This leads to great reduction of surface area on the wafer. Furthermore, this technique allows us to break through the re-contacting and dispersion problems that might affect the RF performance accuracy of future devices

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2006 European Microwave Integrated Circuits Conference

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