使用STT-MRAM进行低功耗计算

Kejie Huang, Rong Zhao
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引用次数: 4

摘要

计算系统每十年缩小100倍,而处理能力每两年翻一番。因此,功率密度一直是限制现代处理器的最关键问题之一。因此,为了降低功耗,新的技术和计算机体系结构正在紧张地发展。磁隧道结(MTJ)纳米柱具有无挥发性、开关速度快、密度高的优点,有望实现新的设计和架构,显著缓解功率问题。同时,它可以堆叠在CMOS电路上,打破内存带宽限制的瓶颈。本文提出了非易失性逻辑门的新设计,并与传统的非易失性触发器、完全非易失性逻辑门和混合非易失性逻辑门进行了比较。仿真结果表明,所提出的非易失性逻辑门具有低功耗的优点,特别是在低开关频率下。所提出的XOR在高开关频率下将传统负载/节省系统中的XOR功耗降低了45%,在100 kHz时降低了92%。所提出的设计还具有可重构性的优点,使设计更具灵活性和鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low power computing using STT-MRAM
The computing systems are scaling down 100 times every decade, while the processing power doubles every two years. As a result, the power density has been the one of the most critical issues that limit the modern processors. Therefore, new technologies and computer architectures are under tensed development to reduce the power consumption. Magnetic tunnel junction (MTJ) nanopillar with the advantages of non-volatility, fast switching speed, and high density promises new designs and architectures to significantly alleviate the power issue. Meanwhile, it could be stacked on top of CMOS circuits to break the bottleneck of memory bandwidth limitation. This paper presents new designs of the non-volatile logic gates, which are compared with the conventional designs including non-volatile flip-flops, fully non-volatile logic gates, and hybrid non-volatile logic gates. The simulation results show that proposed non-volatile logic gates have the advantage of low power, especially at the low switching frequency. The proposed XOR has reduced the power consumption of XOR in the conventional load/save systems by 45% at high switching frequency, and 92% at 100 kHz. The proposed designs also show the advantage of reconfigurability, which makes the designs more flexible and robust.
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