硅衬底上激光诱导Al和Cu正向转移的优化参数

Mohammad Hossein Azhdast, H. Eichler, K.-D. Lang, V. Glaw
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引用次数: 2

摘要

研究目标是进行激光写入研究,以沉积微/纳米颗粒在衬底上作为互连用途。激光能量的阈值,每次激光脉冲,以及脉冲重叠是实现最佳沉积效果的关键。本文研究了在硅片衬底上激光沉积铝和铜纳米粒子的新技术。利用激光辐射溅射纳米粒子,在单面镀膜玻璃上沉积了μm薄膜。供体膜与衬底之间的距离(ε)可达100 μm,优化后为300 μm。首先开发并提出了沉积参数的逐步优化指南。为了获得最佳的沉积效果,激光直写法必须确定激光能量阈值、每次激光脉冲数以及脉冲叠加。该技术被认为是光刻工艺中最重要的直接写入替代方案,以产生具有
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization Parameters for Laser-induced Forward Transfer of Al and Cu on Si-wafer Substrate
The research goal is to perform a laser-writing study to deposition of micro/nano particles on the substrate as interconnection usage. The threshold of laser energy, pulses per laser shot, as well as pulse overlapping is crucial to achieve the best deposition results possible. The present study aims to the novel technique by laser deposition of Aluminium and Copper nano particles on silicon wafer substrate. Thin μm films have been deposited from one-side coated glass to Silicon wafers by sputtering nano particles using laser radiation. Distance between donor film and substrate (ε) was up to several 100 μm and it has been optimized as 300 μm. A step-by-step optimization guide for deposition parameters were first developed and presented. The identification of laser energy threshold, pulses per laser shot, in addition to pulse overlapping is essential if the best deposition results are going to be drawn by laser direct writing method. This technique is regarded as the most important direct-write alternative for lithographic processes in order to generate patterns with
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