{"title":"用微扰理论方法模拟p - i - n二极管有源区载流子分布","authors":"A. Bomba, I. Moroz","doi":"10.32626/2308-5916.2021-22.20-30","DOIUrl":null,"url":null,"abstract":"A mathematical model of the electron-hole plasma stationary distribution in the active region (i-region) of p-i-n-diodes in the dif-fusion-drift approximation is proposed. The model is represented in the form of a nonlinear singularly perturbed boundary value prob-lem for the system of equations of the electron-hole currents conti-nuity, the Poisson equation and the corresponding boundary condi-tions. The decomposition of the nonlinear boundary value problem of modeling the stationary distribution of charge carriers in the plasma of p-i-n-diodes is carried out on the basis of the solutions asymptotic representation. The model problem is reduced to a se-quence of the linear boundary value problems with a characteristic separation of the main (regular) components of the asymptotics and a boundary corrections. It was found that the formulation of the problem for finding the zero term of the asymptotics regular part coincides with the classical formulation of the p-i-n-diodes charac-teristics modeling problem, which is carried out in the approxima-tion of the ambipolar diffusion (approximation of a self-consistent electrostatic field).The proposed mathematical model and the method of its linearization make it possible to determing the main components in the diffusion-drift process and to study their role. For example, it becomes possible to study (including by analytical methods) the behavior of plasma in the p-i-, n-i-contacts zones. The results of the study are aimed at developing methods for de-signing p-i-n-diode structures, used, in particular, as active ele-ments of the signals switches of a microwave data transmission systems and the corresponding protective devices.","PeriodicalId":375537,"journal":{"name":"Mathematical and computer modelling. Series: Technical sciences","volume":"184 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of the Charge Carriers Distribution in the Active Region of the P-I-N-Diodes by the Perturbation Theory Methods\",\"authors\":\"A. Bomba, I. Moroz\",\"doi\":\"10.32626/2308-5916.2021-22.20-30\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A mathematical model of the electron-hole plasma stationary distribution in the active region (i-region) of p-i-n-diodes in the dif-fusion-drift approximation is proposed. The model is represented in the form of a nonlinear singularly perturbed boundary value prob-lem for the system of equations of the electron-hole currents conti-nuity, the Poisson equation and the corresponding boundary condi-tions. The decomposition of the nonlinear boundary value problem of modeling the stationary distribution of charge carriers in the plasma of p-i-n-diodes is carried out on the basis of the solutions asymptotic representation. The model problem is reduced to a se-quence of the linear boundary value problems with a characteristic separation of the main (regular) components of the asymptotics and a boundary corrections. It was found that the formulation of the problem for finding the zero term of the asymptotics regular part coincides with the classical formulation of the p-i-n-diodes charac-teristics modeling problem, which is carried out in the approxima-tion of the ambipolar diffusion (approximation of a self-consistent electrostatic field).The proposed mathematical model and the method of its linearization make it possible to determing the main components in the diffusion-drift process and to study their role. For example, it becomes possible to study (including by analytical methods) the behavior of plasma in the p-i-, n-i-contacts zones. The results of the study are aimed at developing methods for de-signing p-i-n-diode structures, used, in particular, as active ele-ments of the signals switches of a microwave data transmission systems and the corresponding protective devices.\",\"PeriodicalId\":375537,\"journal\":{\"name\":\"Mathematical and computer modelling. Series: Technical sciences\",\"volume\":\"184 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical and computer modelling. Series: Technical sciences\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.32626/2308-5916.2021-22.20-30\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical and computer modelling. Series: Technical sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.32626/2308-5916.2021-22.20-30","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of the Charge Carriers Distribution in the Active Region of the P-I-N-Diodes by the Perturbation Theory Methods
A mathematical model of the electron-hole plasma stationary distribution in the active region (i-region) of p-i-n-diodes in the dif-fusion-drift approximation is proposed. The model is represented in the form of a nonlinear singularly perturbed boundary value prob-lem for the system of equations of the electron-hole currents conti-nuity, the Poisson equation and the corresponding boundary condi-tions. The decomposition of the nonlinear boundary value problem of modeling the stationary distribution of charge carriers in the plasma of p-i-n-diodes is carried out on the basis of the solutions asymptotic representation. The model problem is reduced to a se-quence of the linear boundary value problems with a characteristic separation of the main (regular) components of the asymptotics and a boundary corrections. It was found that the formulation of the problem for finding the zero term of the asymptotics regular part coincides with the classical formulation of the p-i-n-diodes charac-teristics modeling problem, which is carried out in the approxima-tion of the ambipolar diffusion (approximation of a self-consistent electrostatic field).The proposed mathematical model and the method of its linearization make it possible to determing the main components in the diffusion-drift process and to study their role. For example, it becomes possible to study (including by analytical methods) the behavior of plasma in the p-i-, n-i-contacts zones. The results of the study are aimed at developing methods for de-signing p-i-n-diode structures, used, in particular, as active ele-ments of the signals switches of a microwave data transmission systems and the corresponding protective devices.