{"title":"一种用于片上集成的190ghz嵌入式馈电贴片天线","authors":"M. V. Thayyil, P. V. Testa, C. Carta, F. Ellinger","doi":"10.23919/RADIO.2018.8572320","DOIUrl":null,"url":null,"abstract":"This paper presents the design and characterization of an integrated rectangular patch antenna implemented in the back end of line (BEOL) of a 130 nm silicon germanium (SiGe) technology. The inset-fed antenna has a patch area of 0.19 mm2. To the knowledge of the authors, this is one of the smallest radiating element areas reported in literature for on-chip antennas at comparable frequencies. Electromagnetic simulations show a maximum antenna gain of 2.6 dBi and a directivity of 9.3 dBi. The measured resonance frequency of 192.3 GHz is in agreement with post-layout simulation results. Design challenges including impact of density fillers in integrated technologies are also discussed.","PeriodicalId":365518,"journal":{"name":"2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 190 GHz Inset-Fed Patch Antenna in SiGe BEOL for On-Chip Integration\",\"authors\":\"M. V. Thayyil, P. V. Testa, C. Carta, F. Ellinger\",\"doi\":\"10.23919/RADIO.2018.8572320\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and characterization of an integrated rectangular patch antenna implemented in the back end of line (BEOL) of a 130 nm silicon germanium (SiGe) technology. The inset-fed antenna has a patch area of 0.19 mm2. To the knowledge of the authors, this is one of the smallest radiating element areas reported in literature for on-chip antennas at comparable frequencies. Electromagnetic simulations show a maximum antenna gain of 2.6 dBi and a directivity of 9.3 dBi. The measured resonance frequency of 192.3 GHz is in agreement with post-layout simulation results. Design challenges including impact of density fillers in integrated technologies are also discussed.\",\"PeriodicalId\":365518,\"journal\":{\"name\":\"2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/RADIO.2018.8572320\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/RADIO.2018.8572320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 190 GHz Inset-Fed Patch Antenna in SiGe BEOL for On-Chip Integration
This paper presents the design and characterization of an integrated rectangular patch antenna implemented in the back end of line (BEOL) of a 130 nm silicon germanium (SiGe) technology. The inset-fed antenna has a patch area of 0.19 mm2. To the knowledge of the authors, this is one of the smallest radiating element areas reported in literature for on-chip antennas at comparable frequencies. Electromagnetic simulations show a maximum antenna gain of 2.6 dBi and a directivity of 9.3 dBi. The measured resonance frequency of 192.3 GHz is in agreement with post-layout simulation results. Design challenges including impact of density fillers in integrated technologies are also discussed.