S. Krawczyk, K. Schohe, C. Klingelhofer, B. Vilotitch, C. Lenoble, M. Villard, X. Hugon, D. Regaud, F. Ducroquet
{"title":"用扫描光致发光评价晶格不匹配InGaAs层和光电二极管阵列","authors":"S. Krawczyk, K. Schohe, C. Klingelhofer, B. Vilotitch, C. Lenoble, M. Villard, X. Hugon, D. Regaud, F. Ducroquet","doi":"10.1109/ICIPRM.1990.203029","DOIUrl":null,"url":null,"abstract":"Scanning photoluminescence (SPL) measurements were used to characterize lattice-mismatched InGaAs/InP heterostructures and to study the correlation between the results of the SPL measurements and the electrical characteristics of the completed p-i-n photodiodes made with this material. Mismatch dislocations, isolated dislocations, and short- and long-range nonuniformities were revealed. Correlations between the results obtained by SPL and the reverse current of the fabricated photodiodes were observed. The defect creation in the epitaxial layers is extremely sensitive to small variations of the process conditions.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"169 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Evaluation of lattice mismatched InGaAs layers and photodiode arrays by scanning photoluminescence\",\"authors\":\"S. Krawczyk, K. Schohe, C. Klingelhofer, B. Vilotitch, C. Lenoble, M. Villard, X. Hugon, D. Regaud, F. Ducroquet\",\"doi\":\"10.1109/ICIPRM.1990.203029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Scanning photoluminescence (SPL) measurements were used to characterize lattice-mismatched InGaAs/InP heterostructures and to study the correlation between the results of the SPL measurements and the electrical characteristics of the completed p-i-n photodiodes made with this material. Mismatch dislocations, isolated dislocations, and short- and long-range nonuniformities were revealed. Correlations between the results obtained by SPL and the reverse current of the fabricated photodiodes were observed. The defect creation in the epitaxial layers is extremely sensitive to small variations of the process conditions.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"169 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of lattice mismatched InGaAs layers and photodiode arrays by scanning photoluminescence
Scanning photoluminescence (SPL) measurements were used to characterize lattice-mismatched InGaAs/InP heterostructures and to study the correlation between the results of the SPL measurements and the electrical characteristics of the completed p-i-n photodiodes made with this material. Mismatch dislocations, isolated dislocations, and short- and long-range nonuniformities were revealed. Correlations between the results obtained by SPL and the reverse current of the fabricated photodiodes were observed. The defect creation in the epitaxial layers is extremely sensitive to small variations of the process conditions.<>
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