碳纳米管ISFET传感器的温度和噪声消除

Ahmed Gaddour, W. Dghais, B. Hamdi, M. Ali
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引用次数: 0

摘要

离子敏感场效应晶体管(isfet)已广泛应用于生化和化学领域的传感器接口。尽管ISFET具有快速反应(即响应)、紧凑的尺寸以及大的测量范围,但温度变化通常会影响测量性能的可靠性,这需要在研究结果和仪器中得到更多的保护。在本文中,我们介绍了一种CNISFET微传感器的新方法,该方法使用柔性模拟电路进行降噪和温度补偿。针对常用的CNISFET微传感器,在TopSPICE平台上进行了仿真。所提出的拓扑结构对温度变化和噪声的干扰具有较强的免疫力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature and noise cancellation for Carbon Nanotube ISFET Sensor
Ions-Sensitive Field-Effect Transistors (ISFETs) have been widely used as sensor interfaces for biochemical and chemistry fields. Despite ISFET’s fast reaction (i.e. response), compact size as well as large measurement range, temperature variability is commonly impact the reliability of the measuring performance, which requires more protection in the results obtained and instruments of the study. In this article, we are introducing a new method for a CNISFET micro-sensor that uses a flexible analog circuit to perform noise reduction and temperature compensation. The circuit is developed for the common CNISFET micro sensor simulated on the TopSPICE platform. The proposed topology demonstrates a strong immunity to temperature variation and the interference of the noise.
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