A. N. Al-Omari, O. M. Khreis, A. Dagamseh, A. Ababneh, K. Lear
{"title":"高速介质平面化850纳米表面发射激光器,配有镀金属散热器","authors":"A. N. Al-Omari, O. M. Khreis, A. Dagamseh, A. Ababneh, K. Lear","doi":"10.1109/ICEDSA.2016.7818469","DOIUrl":null,"url":null,"abstract":"850-nm vertical-cavity laser diodes with copper-plated heat sinks were fabricated and tested. Vertical-cavity surface-emitting lasers with 10μm aperture diameter and 4μm of electroplated copper demonstrated a maximum −3dB modulation bandwidth of more than 16GHz and a resonance frequency of more than 11GHz at bias current of only 5.4mA, which correspond to a bias current density of only 7.5kA/cm<sup>2</sup>. Thus, reported devices exhibited a high −3dB modulation bandwidth squared over bias current density ratio of more than 35GHz<sup>2</sup>/kA/cm<sup>2</sup>. The displayed 7.5 kA/cm<sup>2</sup> bias current density is less than the 10 kA/cm<sup>2</sup> current density standard for reliability by 25%. Devices also demonstrate a reduced thermal resistance of 1.01 °C/mW, a threshold current of 1.1mA, a series resistance of only 60Ω, and a maximum output power density of about 1.2mW/cm<sup>2</sup>.","PeriodicalId":247318,"journal":{"name":"2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA)","volume":"470 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-speed dielectric-planarized 850nm surface-emitting lasers with metal-plated heat sinks\",\"authors\":\"A. N. Al-Omari, O. M. Khreis, A. Dagamseh, A. Ababneh, K. Lear\",\"doi\":\"10.1109/ICEDSA.2016.7818469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"850-nm vertical-cavity laser diodes with copper-plated heat sinks were fabricated and tested. Vertical-cavity surface-emitting lasers with 10μm aperture diameter and 4μm of electroplated copper demonstrated a maximum −3dB modulation bandwidth of more than 16GHz and a resonance frequency of more than 11GHz at bias current of only 5.4mA, which correspond to a bias current density of only 7.5kA/cm<sup>2</sup>. Thus, reported devices exhibited a high −3dB modulation bandwidth squared over bias current density ratio of more than 35GHz<sup>2</sup>/kA/cm<sup>2</sup>. The displayed 7.5 kA/cm<sup>2</sup> bias current density is less than the 10 kA/cm<sup>2</sup> current density standard for reliability by 25%. Devices also demonstrate a reduced thermal resistance of 1.01 °C/mW, a threshold current of 1.1mA, a series resistance of only 60Ω, and a maximum output power density of about 1.2mW/cm<sup>2</sup>.\",\"PeriodicalId\":247318,\"journal\":{\"name\":\"2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA)\",\"volume\":\"470 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEDSA.2016.7818469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEDSA.2016.7818469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-speed dielectric-planarized 850nm surface-emitting lasers with metal-plated heat sinks
850-nm vertical-cavity laser diodes with copper-plated heat sinks were fabricated and tested. Vertical-cavity surface-emitting lasers with 10μm aperture diameter and 4μm of electroplated copper demonstrated a maximum −3dB modulation bandwidth of more than 16GHz and a resonance frequency of more than 11GHz at bias current of only 5.4mA, which correspond to a bias current density of only 7.5kA/cm2. Thus, reported devices exhibited a high −3dB modulation bandwidth squared over bias current density ratio of more than 35GHz2/kA/cm2. The displayed 7.5 kA/cm2 bias current density is less than the 10 kA/cm2 current density standard for reliability by 25%. Devices also demonstrate a reduced thermal resistance of 1.01 °C/mW, a threshold current of 1.1mA, a series resistance of only 60Ω, and a maximum output power density of about 1.2mW/cm2.