物理故障分析，区分EOS和ESD故障

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) Pub Date : 2002-11-07 DOI:10.1109/IPFA.2002.1025613

Tung Chih Hang, Cheng Cheng Kou, M.K. Radhakrishnan, N. M. Iyer

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引用次数: 12

摘要

一种系统的物理失效分析方法可以用于区分亚微米硅器件中EOS和ESD的损伤。尽管观察到的电气故障模式是相同的，但通过了解故障特征的差异进行彻底分析，并采用特定方法，可以在很大程度上区分EOS和ESD故障。对现场失效和模拟失效情况进行了研究，以确定失效特征的差异。

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Physical failure analysis to distinguish EOS and ESD failures

A systematic physical failure analysis methodology can be applied to distinguish the damage induced by EOS and ESD in sub-micron silicon devices. Eventhough the electrical failure modes observed are identical, by a thorough analysis knowing the differences in failure signatures, as well as employing specific methods, it is found possible to distinguish between EOS and ESD failures to a great extent. Both field failed and simulated failed cases have been studied to establish the difference in failure signatures.

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Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)

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