利用T-CAD工具提高快速开关电源整流器的良率

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004029

P. Garcia, J. L. del Valle, Y. Matsumoto, K. Akinade, H.E. Aldrete

{"title":"利用T-CAD工具提高快速开关电源整流器的良率","authors":"P. Garcia, J. L. del Valle, Y. Matsumoto, K. Akinade, H.E. Aldrete","doi":"10.1109/ICCDCS.2002.1004029","DOIUrl":null,"url":null,"abstract":"Technological changes for mature devices are not as straightforward as one wishes. Reducing learning curve time is a must to remain competitive in the market share. This paper present a method based on device physics and simulation using T-CAD tool coupled with a virtual DOE technique to assess yield improvement and learning curve reduction. The method is applied to platinum doped fast switching power rectifiers.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The use of T-CAD tool for yield improvement on fast-switching power rectifiers\",\"authors\":\"P. Garcia, J. L. del Valle, Y. Matsumoto, K. Akinade, H.E. Aldrete\",\"doi\":\"10.1109/ICCDCS.2002.1004029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Technological changes for mature devices are not as straightforward as one wishes. Reducing learning curve time is a must to remain competitive in the market share. This paper present a method based on device physics and simulation using T-CAD tool coupled with a virtual DOE technique to assess yield improvement and learning curve reduction. The method is applied to platinum doped fast switching power rectifiers.\",\"PeriodicalId\":416680,\"journal\":{\"name\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2002.1004029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

成熟设备的技术变革并不像人们希望的那样简单。缩短学习曲线时间是保持市场份额竞争力的必要条件。本文提出了一种基于器件物理和仿真的方法，利用T-CAD工具结合虚拟DOE技术来评估成品率的提高和学习曲线的缩短。将该方法应用于掺杂铂的快速开关功率整流器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The use of T-CAD tool for yield improvement on fast-switching power rectifiers

Technological changes for mature devices are not as straightforward as one wishes. Reducing learning curve time is a must to remain competitive in the market share. This paper present a method based on device physics and simulation using T-CAD tool coupled with a virtual DOE technique to assess yield improvement and learning curve reduction. The method is applied to platinum doped fast switching power rectifiers.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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