一种工作在非线性区域的低相位噪声10MHz微机械lamims -mode体振荡器

T. Niu, M. Palaniapan
{"title":"一种工作在非线性区域的低相位噪声10MHz微机械lamims -mode体振荡器","authors":"T. Niu, M. Palaniapan","doi":"10.1109/FREQ.2010.5556345","DOIUrl":null,"url":null,"abstract":"In this paper, a 10MHz micromechanical reference oscillator is presented by combining lamé-mode bulk resonator with Q above 200,000 and low noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase noise performance has been achieved even when the resonator is operating in nonlinear region with a 4Vp-p oscillation output. A clear sine wave output signal is observed and the oscillator shows −138dBc/Hz noise floor and −132dBc/Hz 1kHz away from the carrier, which meets the cellular phase noise requirement of −130dBc/Hz at 1kHz offset for 13MHz GSM reference oscillators. Such oscillator does not require any gain limiting circuitry and hence makes the implementation much simpler and less noisy.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A low phase noise 10MHz micromechanical lamé-mode bulk oscillator operating in nonlinear region\",\"authors\":\"T. Niu, M. Palaniapan\",\"doi\":\"10.1109/FREQ.2010.5556345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 10MHz micromechanical reference oscillator is presented by combining lamé-mode bulk resonator with Q above 200,000 and low noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase noise performance has been achieved even when the resonator is operating in nonlinear region with a 4Vp-p oscillation output. A clear sine wave output signal is observed and the oscillator shows −138dBc/Hz noise floor and −132dBc/Hz 1kHz away from the carrier, which meets the cellular phase noise requirement of −130dBc/Hz at 1kHz offset for 13MHz GSM reference oscillators. Such oscillator does not require any gain limiting circuitry and hence makes the implementation much simpler and less noisy.\",\"PeriodicalId\":344989,\"journal\":{\"name\":\"2010 IEEE International Frequency Control Symposium\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Frequency Control Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2010.5556345\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Frequency Control Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2010.5556345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

本文提出了一种结合Q值在20万以上的lam模体谐振器和低噪声片外接口电路的10MHz微机械参考振荡器。得益于本体谐振器的高质量因数和大储能能力,即使谐振器工作在4Vp-p振荡输出的非线性区域,也能实现低相位噪声性能。观察到一个清晰的正弦波输出信号,振荡器显示- 138dBc/Hz的本底噪声和- 132dBc/Hz的载波距离1kHz,满足13MHz GSM参考振荡器在1kHz偏移时- 130dBc/Hz的蜂窝相位噪声要求。这种振荡器不需要任何增益限制电路,因此使实现更简单,噪音更小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low phase noise 10MHz micromechanical lamé-mode bulk oscillator operating in nonlinear region
In this paper, a 10MHz micromechanical reference oscillator is presented by combining lamé-mode bulk resonator with Q above 200,000 and low noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase noise performance has been achieved even when the resonator is operating in nonlinear region with a 4Vp-p oscillation output. A clear sine wave output signal is observed and the oscillator shows −138dBc/Hz noise floor and −132dBc/Hz 1kHz away from the carrier, which meets the cellular phase noise requirement of −130dBc/Hz at 1kHz offset for 13MHz GSM reference oscillators. Such oscillator does not require any gain limiting circuitry and hence makes the implementation much simpler and less noisy.
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