Z. Khan, Jie-Chen Shih, Chen-Lung Cheng, Jin-Wei Shi
{"title":"940nm波长高功率和高单模锌扩散vcsel","authors":"Z. Khan, Jie-Chen Shih, Chen-Lung Cheng, Jin-Wei Shi","doi":"10.1109/IPCon.2019.8908460","DOIUrl":null,"url":null,"abstract":"We demonstrate Zn-diffusion 940 nm VCSELs, which exhibits high-power (6.8 mW), highly single-mode (SMSR>50 dB) performances over the full range of bias currents. A wide −3-dB E-O bandwidth (18 GHz) and a short rise/fall time (20/11 ps) can also be achieved simultaneously.","PeriodicalId":314151,"journal":{"name":"2019 IEEE Photonics Conference (IPC)","volume":"270 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"High-Power and Highly Single-Mode Zn-Diffusion VCSELs at 940 nm Wavelength\",\"authors\":\"Z. Khan, Jie-Chen Shih, Chen-Lung Cheng, Jin-Wei Shi\",\"doi\":\"10.1109/IPCon.2019.8908460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate Zn-diffusion 940 nm VCSELs, which exhibits high-power (6.8 mW), highly single-mode (SMSR>50 dB) performances over the full range of bias currents. A wide −3-dB E-O bandwidth (18 GHz) and a short rise/fall time (20/11 ps) can also be achieved simultaneously.\",\"PeriodicalId\":314151,\"journal\":{\"name\":\"2019 IEEE Photonics Conference (IPC)\",\"volume\":\"270 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Photonics Conference (IPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPCon.2019.8908460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Photonics Conference (IPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPCon.2019.8908460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-Power and Highly Single-Mode Zn-Diffusion VCSELs at 940 nm Wavelength
We demonstrate Zn-diffusion 940 nm VCSELs, which exhibits high-power (6.8 mW), highly single-mode (SMSR>50 dB) performances over the full range of bias currents. A wide −3-dB E-O bandwidth (18 GHz) and a short rise/fall time (20/11 ps) can also be achieved simultaneously.