CuIn/sub 3/Se/sub 5/层在CuInSe/sub 2/薄膜上的生长及其对In/sub 2/Se/sub 3//CuInSe/sub 2/太阳能电池光伏性能的影响

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI:10.1109/PVSC.1997.654111

S. Kwon, Sung Chan Park, B. Ahn, K. Yoon, Jinsoo Song

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引用次数: 1

摘要

采用三阶段法制备了CuInSe/ sub2 /太阳能电池，研究了CuInSe/ sub3 /Se/ sub5 /层在CuInSe/ sub2 /薄膜上的生长。在生长CuInSe/sub - 2/薄膜后，薄膜表面迅速转化为可能的有序空位化合物(CuIn/sub - 3/Se/sub - 5/)。AES深度分析表明，在CuInSe/sub 2/表面存在CuIn/sub 3/Se/sub 5/层。CuInSe/sub 2/表面形成CuIn/sub 3/Se/sub 5/相，能带隙由1.04 eV变为1.24 eV。由于CuIn/sub 3/Se/sub 5/的晶格参数较小，XRD峰移至较高的2/spl θ /值。In/sub 2/Se/sub 3//CuInSe/sub 2/电池在界面处具有薄的CuIn/sub 3/Se/sub 5/层，其太阳能效率为8.46%，有效面积为0.2 cm/sup 2/。在CuInSe/sub 2/薄膜上加厚CuIn/sub 3/Se/sub 5/层制备的器件显示出双二极管效应，这可能是导致结界面增加的原因。

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Growth of CuIn/sub 3/Se/sub 5/ layer on the CuInSe/sub 2/ film and its effect on the photovoltaic properties of In/sub 2/Se/sub 3//CuInSe/sub 2/ solar cells

The growth of CuIn/sub 3/Se/sub 5/ layer on CuInSe/sub 2/ films has been studied for the fabrication of CuInSe/sub 2/ solar cell, using the three-stage process. After growing the CuInSe/sub 2/ film, the film surface was quickly converted to a possible ordered vacancy compound (CuIn/sub 3/Se/sub 5/). AES depth analysis indicated the presence of a CuIn/sub 3/Se/sub 5/ layer on the CuInSe/sub 2/ surface. The energy bandgap shifted from 1.04 to 1.24 eV by the formation of CuIn/sub 3/Se/sub 5/ phase on CuInSe/sub 2/ surface. Because the lattice parameters of CuIn/sub 3/Se/sub 5/ are smaller, the XRD peaks were shifted to higher 2/spl theta/ values. In/sub 2/Se/sub 3//CuInSe/sub 2/ cells with a thin CuIn/sub 3/Se/sub 5/ layer at the interface yielded solar efficiency of 8.46% with an active area of 0.2 cm/sup 2/. The device fabricated from the films with a thick CuIn/sub 3/Se/sub 5/ layer on CuInSe/sub 2/ film displayed a double diode effect which was possibly caused the increase of junction interface.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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