用先进的分割C-V和霍尔因子分析表征MOS反转层迁移率的新方法

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346874

A. Toriumi, K. Kita, H. Irie

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引用次数: 15

摘要

在逆温层迁移率分析中，重新研究了寄生效应和Matthiessen规则。结果表明，新开发的一种先进的分割C-V技术对于表征短沟道mosfet的本征反转层迁移率非常有用，即使寄生效应非常大。通过霍尔因子分析，从实验和理论上考察了马西森规则的有效性

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Novel Approach to MOS Inversion Layer Mobility Characterization with Advanced Split C-V and Hall Factor Analyses

Parasitic effects and Matthiessen's rule have been reinvestigated in the inversion layer mobility analysis. It is shown that an advanced split C-V technique newly developed is very useful for characterizing the intrinsic inversion layer mobility in short channel MOSFETs, even with very large parasitic effects. Furthermore, the validity of Matthiessen's rule is experimentally and theoretically investigated through Hall factor analysis

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2006 International Electron Devices Meeting

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