利用光反射率研究表面δ掺杂砷化镓的带间跃迁

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791702

W. Lu, X. Liu, X. Chen, G. Shi, Y. Qiao, S. Shen, Y. Fu, M. Willander

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引用次数: 0

摘要

本文采用室温调制光反射光谱技术研究了Si在GaAs[100]表面的掺杂行为。采用包络波函数模型结合δ掺杂诱导电位的实验带间跃迁能，得到表面掺杂GaAs样品中载流子浓度最高的位置为1/spl倍/10/sup / 14/ cm/sup -2/。

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Interband transition in surface delta-doped GaAs studied by photo-reflectance

In this paper we present the study on the surface doping behavior of Si on the GaAs [100] surface by using modulated photo-reflection spectroscopy technique at room temperature. With the envelope wave function model combined with experimental interband transition energy in the delta-doping induced potential the highest carrier concentration in the surface doping GaAs sample is obtained around 1/spl times/10/sup 14/ cm/sup -2/.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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