{"title":"50mhz至6ghz 1瓦GaAs pHEMT堆叠分布式功率放大器","authors":"Haifeng Wu, Q. Lin, Yijun Chen, Liu-lin Hu, Xiao-Ming Zhang, Dan-hui Hu, Si-wei Chen","doi":"10.1109/IEEE-IWS.2019.8803922","DOIUrl":null,"url":null,"abstract":"In this paper, a 0.5–6 GHz power amplifier (PA) is designed using a 0.15 μm GaAs pHEMT process, which employs 4-distributed 2-stacked-FETs to obtain a broadband power performance and wideband power gain. Biasing with a 12 V drain voltage, this PA shows measurement results of about 1-watt output power in the frequency range of 0.5–6 GHz with corresponding power added efficiency of 22–29%. The measured S-parameters show a very flat gain (S21) of 17±0.3 dB, a maximum input return loss (S11) of −13 dB, a maximum output return loss (S22) of −15 dB. The chip occupies a small chip size of 3×1.6 mm2.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 50 MHz to 6 GHz 1-Watt GaAs pHEMT Stacked Distributed Power Amplifier\",\"authors\":\"Haifeng Wu, Q. Lin, Yijun Chen, Liu-lin Hu, Xiao-Ming Zhang, Dan-hui Hu, Si-wei Chen\",\"doi\":\"10.1109/IEEE-IWS.2019.8803922\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 0.5–6 GHz power amplifier (PA) is designed using a 0.15 μm GaAs pHEMT process, which employs 4-distributed 2-stacked-FETs to obtain a broadband power performance and wideband power gain. Biasing with a 12 V drain voltage, this PA shows measurement results of about 1-watt output power in the frequency range of 0.5–6 GHz with corresponding power added efficiency of 22–29%. The measured S-parameters show a very flat gain (S21) of 17±0.3 dB, a maximum input return loss (S11) of −13 dB, a maximum output return loss (S22) of −15 dB. The chip occupies a small chip size of 3×1.6 mm2.\",\"PeriodicalId\":306297,\"journal\":{\"name\":\"2019 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2019.8803922\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2019.8803922","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 50 MHz to 6 GHz 1-Watt GaAs pHEMT Stacked Distributed Power Amplifier
In this paper, a 0.5–6 GHz power amplifier (PA) is designed using a 0.15 μm GaAs pHEMT process, which employs 4-distributed 2-stacked-FETs to obtain a broadband power performance and wideband power gain. Biasing with a 12 V drain voltage, this PA shows measurement results of about 1-watt output power in the frequency range of 0.5–6 GHz with corresponding power added efficiency of 22–29%. The measured S-parameters show a very flat gain (S21) of 17±0.3 dB, a maximum input return loss (S11) of −13 dB, a maximum output return loss (S22) of −15 dB. The chip occupies a small chip size of 3×1.6 mm2.
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