Localized surface plasmon-enhanced photodetection in β-Ga2O3 solar-blind photodetector with Sn nanoparticles array

Surface plasma is effective to enhance the light absorption of semiconductor and accordingly the photodetection performance of related photodetectors, but its application in the region of deep-ultraviolet light still face severe challenges. Herein, a β-Ga2O3 solar-blind photodetector with Sn nanoparticles array is fabricated. Due to the surface plasma effect of Sn nanoparticles with suitable sizes, the photodetection characteristics of β-Ga2O3 solar-blind photodetector, including light to dark current ratio, responsivity and detectivity, have been successfully doubled, resulting in ultrahigh sensitivity. This work provides an alternative technique to realize low-cost, high-performance and solar-blind photodetectors.