光产生慢波现象的最新进展

Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering', Pub Date : 1989-04-11 DOI:10.1109/MELCON.1989.50140

T. Itoh

{"title":"光产生慢波现象的最新进展","authors":"T. Itoh","doi":"10.1109/MELCON.1989.50140","DOIUrl":null,"url":null,"abstract":"The author reviews guided wave phenomena in a transmission line on a heterostructure semiconductor in which slow wave propagation is generated by optical illumination. The device consists of a heterostructure in which a GaAs layer is sandwiched by GaAlAs layers. A typical planar transmission line such as a coplanar waveguide is formed on the top surface. Experimental results are given. The measurement was done at illumination intensities of 3.2 mW/cm/sup 2/, 32.0 mW/cm/sup 2/, and 63.7 mW/cm/sup 2/. A maximum relative phase shift of 60 degrees at 9.5 GHz was observed for an illumination of 3.2 mW/cm/sup 2/. The present work is directed toward the development of an optically controlled phase shifter in a form compatible with monolithic microwave integrated circuit techniques.<<ETX>>","PeriodicalId":380214,"journal":{"name":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recent development in optically generated slow wave phenomena\",\"authors\":\"T. Itoh\",\"doi\":\"10.1109/MELCON.1989.50140\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The author reviews guided wave phenomena in a transmission line on a heterostructure semiconductor in which slow wave propagation is generated by optical illumination. The device consists of a heterostructure in which a GaAs layer is sandwiched by GaAlAs layers. A typical planar transmission line such as a coplanar waveguide is formed on the top surface. Experimental results are given. The measurement was done at illumination intensities of 3.2 mW/cm/sup 2/, 32.0 mW/cm/sup 2/, and 63.7 mW/cm/sup 2/. A maximum relative phase shift of 60 degrees at 9.5 GHz was observed for an illumination of 3.2 mW/cm/sup 2/. The present work is directed toward the development of an optically controlled phase shifter in a form compatible with monolithic microwave integrated circuit techniques.<<ETX>>\",\"PeriodicalId\":380214,\"journal\":{\"name\":\"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MELCON.1989.50140\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.1989.50140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文综述了光学照明产生慢波传播的异质结构半导体传输线中的导波现象。该器件由异质结构组成，其中GaAs层被GaAlAs层夹在中间。在顶表面形成典型的平面传输线，如共面波导。给出了实验结果。测量在3.2 mW/cm/sup 2/、32.0 mW/cm/sup 2/和63.7 mW/cm/sup 2/的光照强度下进行。当光照强度为3.2 mW/cm/sup /时，在9.5 GHz频率下的最大相对相移为60度。目前的工作方向是开发一种与单片微波集成电路技术兼容的光控移相器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Recent development in optically generated slow wave phenomena

The author reviews guided wave phenomena in a transmission line on a heterostructure semiconductor in which slow wave propagation is generated by optical illumination. The device consists of a heterostructure in which a GaAs layer is sandwiched by GaAlAs layers. A typical planar transmission line such as a coplanar waveguide is formed on the top surface. Experimental results are given. The measurement was done at illumination intensities of 3.2 mW/cm/sup 2/, 32.0 mW/cm/sup 2/, and 63.7 mW/cm/sup 2/. A maximum relative phase shift of 60 degrees at 9.5 GHz was observed for an illumination of 3.2 mW/cm/sup 2/. The present work is directed toward the development of an optically controlled phase shifter in a form compatible with monolithic microwave integrated circuit techniques.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',

自引率

0.00%

发文量