用于DVFS处理器多阶段时序误差恢复的借时触发器结构

Avisekh Ghosh, Mohd Saif Naseem, C. I. Kumar
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引用次数: 2

摘要

近阈值电压(NTV)设计由于其最佳的能量延迟产品而被广泛应用于低功耗VLSI设计。动态电压和频率缩放(DVFS)设计最近引起了人们的兴趣,以提高运行时的能源效率。在低利用率时期,可以通过降低时钟速度和降低电源电压来调整芯片的性能和功耗,从而使其工作在NTV区域。然而,低电压运行时的高动态变化是近阈值采用的关键设计挑战和障碍。因此,在设计过程中必须考虑较大的时间裕度,以确保高产量和稳健运行。误差弹性电路有助于恢复时间裕度,从而以低功耗提高性能。本文提出了EDTB (Error Detection with time - borrowing),这是一种用于多级时序错误恢复的新架构,它通过从连续的管道阶段中借用时间来掩盖时序错误,而不会减慢时钟速度。所提出的错误处理方案不需要像指令重放或回滚这样的错误恢复机制;因此,它不关联任何错误恢复惩罚。基于edtb的错误屏蔽由于其最小的保持时间要求而对故障和伪转换具有弹性。EDTB体系结构在晶体管数量和时钟路由方面比以前的体系结构显著提高了34%和50%。电路原理图在Cadence Virtuoso ADE中基于7纳米FinFET的预测工艺设计套件中原型化;然后进行模拟、验证和进一步的比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Time-Borrowing Flip-Flop Architecture for Multi-Stage Timing Error Resilience in DVFS Processors
Near-threshold voltage (NTV) design has been proposed for low-power VLSI designs across a wide range of applications due to its optimal Energy-Delay Product. Dynamic Voltage and Frequency Scaling (DVFS) design has acquired recent interest to increase energy efficiency during runtime. During periods of low utilization, a chip’s performance and power consumption can be adjusted by slowing down the clock speed and decreasing the supply voltage, thereby bringing its operation to the NTV region. However, high dynamic variations at low voltage operation is the key design challenge and barrier for near-threshold adoption. Hence, it becomes mandatory to consider large timing margins during design to ensure high yield and robust operation. Error resilient circuits help to restore the timing margins, thereby improving performance with low power consumption. This paper presents EDTB (Error Detection with Time-Borrowing), a novel architecture for multi-stage timing error resilience which masks timing errors by borrowing time from successive pipeline stages, without slowing down the clock speed. The proposed error handling scheme doesn’t require error recovery mechanisms like instruction replay or roll-back; hence it doesn’t associate any error recovery penalty. EDTB-based error masking is resilient to glitches and spurious transitions due to its minimal hold time requirement. EDTB architecture shows a significant improvement of up to 34% in transistor count and 50% in clock routing over the previous architecture. The circuit schematic was prototyped in Cadence Virtuoso ADE in a 7-nm FinFET based predictive process design kit; followed by simulation, validation, and further comparisons.
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