R. Millar, K. Gallacher, J. Frigerio, D. Chrastina, G. Isella, D. Paul
{"title":"具有氮化硅应力源的硅微盘上的高应变Ge","authors":"R. Millar, K. Gallacher, J. Frigerio, D. Chrastina, G. Isella, D. Paul","doi":"10.1109/GROUP4.2015.7305948","DOIUrl":null,"url":null,"abstract":"Resonant emission is observed up to ~2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Highly strained Ge on Si microdisks with silicon nitride stressors\",\"authors\":\"R. Millar, K. Gallacher, J. Frigerio, D. Chrastina, G. Isella, D. Paul\",\"doi\":\"10.1109/GROUP4.2015.7305948\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resonant emission is observed up to ~2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.\",\"PeriodicalId\":244331,\"journal\":{\"name\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2015.7305948\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly strained Ge on Si microdisks with silicon nitride stressors
Resonant emission is observed up to ~2.3μm from Ge on Si microdisks, strained by silicon nitride stressors. These results demonstrate that compact, highly strained Ge cavities are achievable on Si substrates using CMOS compatible processes.