{"title":"考虑正向二次击穿的功率晶体管电路的安全设计方法","authors":"Z. Pióro","doi":"10.1109/IEDM.1977.189276","DOIUrl":null,"url":null,"abstract":"In this paper the results of studies of second breakdown phenomenon in bipolar transistors are presented. Along with this a new feature of second breakdown phenomenon and new method of designing of electronic power circuits based on this feature is discussed.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Safe method of designing of power transistors circuits with forward second breakdown taken into consideration\",\"authors\":\"Z. Pióro\",\"doi\":\"10.1109/IEDM.1977.189276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the results of studies of second breakdown phenomenon in bipolar transistors are presented. Along with this a new feature of second breakdown phenomenon and new method of designing of electronic power circuits based on this feature is discussed.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189276\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Safe method of designing of power transistors circuits with forward second breakdown taken into consideration
In this paper the results of studies of second breakdown phenomenon in bipolar transistors are presented. Along with this a new feature of second breakdown phenomenon and new method of designing of electronic power circuits based on this feature is discussed.
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