高集成度SiGe BiCMOS WCDMA发射IC

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.992208

A. Bellaouar, M. Frechette, A. Fridi, S. Embabi

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引用次数: 22

摘要

高度集成的SiGe BiCMOS WCDMA发射机IC由VHF、UHF链和合成器组成。在输出功率为6dbm时，它在2.7 V下消耗79 mA，在5 MHz偏移时，EVM为5% r.m.s, ACLR为-42 dBc。带内输出噪声为-128 Bm/Hz，接收输出噪声为-135 Bm/Hz。完全集成的锁相环使用片上VCO储罐，不需要片外环路滤波器。

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Highly-integrated SiGe BiCMOS WCDMA transmitter IC

A highly-integrated SiGe BiCMOS WCDMA transmitter IC consists of VHF, UHF chains, and synthesizers. At 6 dBm output power, it consumes 79 mA at 2.7 V, with a 5% r.m.s. EVM and -42 dBc ACLR at 5 MHz offset. In-band and receive-band output noise are -128 and -135 Bm/Hz, respectively. Fully integrated PLLs use on-chip VCO tanks and require no off-chip loop filters.

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2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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