{"title":"片上数字温度电压传感器环形振荡器的选择方法","authors":"Yousuke Miyake, Yasuo Sato, S. Kajihara","doi":"10.1109/ITC-Asia.2019.00016","DOIUrl":null,"url":null,"abstract":"An on-chip digital sensor using three types of ring oscillators (ROs: Ring Oscillators) has been proposed to measure temperature and voltage of a VLSI. Each RO has inherent frequency characteristics with respect to temperature and voltage, which differ from those of the other two ROs. Measurement accuracy of the sensor depends on the combination of the ROs. This paper proposes a RO-selection method for the sensor with high accuracy. The proposed method takes particular note of temperature or voltage sensitivity as well as linearity of the RO characteristics. Evaluation experiments with SPICE simulation in 65 nm CMOS technology show that the temperature and voltage accuracies of the sensor are 2.744 °C and 3.825 mV, respectively, and the selected combination was a nearly optimal from a menu of many different ROs.","PeriodicalId":348469,"journal":{"name":"2019 IEEE International Test Conference in Asia (ITC-Asia)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Selection Method of Ring Oscillators for An On-Chip Digital Temperature And Voltage Sensor\",\"authors\":\"Yousuke Miyake, Yasuo Sato, S. Kajihara\",\"doi\":\"10.1109/ITC-Asia.2019.00016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An on-chip digital sensor using three types of ring oscillators (ROs: Ring Oscillators) has been proposed to measure temperature and voltage of a VLSI. Each RO has inherent frequency characteristics with respect to temperature and voltage, which differ from those of the other two ROs. Measurement accuracy of the sensor depends on the combination of the ROs. This paper proposes a RO-selection method for the sensor with high accuracy. The proposed method takes particular note of temperature or voltage sensitivity as well as linearity of the RO characteristics. Evaluation experiments with SPICE simulation in 65 nm CMOS technology show that the temperature and voltage accuracies of the sensor are 2.744 °C and 3.825 mV, respectively, and the selected combination was a nearly optimal from a menu of many different ROs.\",\"PeriodicalId\":348469,\"journal\":{\"name\":\"2019 IEEE International Test Conference in Asia (ITC-Asia)\",\"volume\":\"184 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Test Conference in Asia (ITC-Asia)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITC-Asia.2019.00016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Test Conference in Asia (ITC-Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITC-Asia.2019.00016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
提出了一种采用三种环形振荡器(ROs: ring oscillator)的片上数字传感器来测量超大规模集成电路的温度和电压。每个RO在温度和电压方面具有固有的频率特性,这与其他两个RO的频率特性不同。传感器的测量精度取决于ROs的组合。本文提出了一种高精度传感器的ro选择方法。所提出的方法特别注意温度或电压敏感性以及RO特性的线性。基于65 nm CMOS技术的SPICE仿真评估实验表明,该传感器的温度和电压精度分别为2.744°C和3.825 mV,并且所选择的组合在许多不同的ROs菜单中几乎是最优的。
A Selection Method of Ring Oscillators for An On-Chip Digital Temperature And Voltage Sensor
An on-chip digital sensor using three types of ring oscillators (ROs: Ring Oscillators) has been proposed to measure temperature and voltage of a VLSI. Each RO has inherent frequency characteristics with respect to temperature and voltage, which differ from those of the other two ROs. Measurement accuracy of the sensor depends on the combination of the ROs. This paper proposes a RO-selection method for the sensor with high accuracy. The proposed method takes particular note of temperature or voltage sensitivity as well as linearity of the RO characteristics. Evaluation experiments with SPICE simulation in 65 nm CMOS technology show that the temperature and voltage accuracies of the sensor are 2.744 °C and 3.825 mV, respectively, and the selected combination was a nearly optimal from a menu of many different ROs.