{"title":"CdTe/CdS pn结二极管中复合电流的器件性能表征和建模","authors":"D. Oman, C. Ferekides, D. Morel","doi":"10.1109/SECON.1996.510103","DOIUrl":null,"url":null,"abstract":"A comprehensive model of pn junction diode behaviour based on Shockley-Read-Hall (SRH) recombination theory is presented and been successfully applied to a large number CdTe photovoltaic cells in the 10%-15% efficiency range. The model accounts for the range of measured values of diode quality factor and reverse saturation current found in our devices as well as an observed relationship between these parameters.","PeriodicalId":338029,"journal":{"name":"Proceedings of SOUTHEASTCON '96","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Device performance characterization and modeling of recombination current in CdTe/CdS pn junction diodes\",\"authors\":\"D. Oman, C. Ferekides, D. Morel\",\"doi\":\"10.1109/SECON.1996.510103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comprehensive model of pn junction diode behaviour based on Shockley-Read-Hall (SRH) recombination theory is presented and been successfully applied to a large number CdTe photovoltaic cells in the 10%-15% efficiency range. The model accounts for the range of measured values of diode quality factor and reverse saturation current found in our devices as well as an observed relationship between these parameters.\",\"PeriodicalId\":338029,\"journal\":{\"name\":\"Proceedings of SOUTHEASTCON '96\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of SOUTHEASTCON '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1996.510103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SOUTHEASTCON '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1996.510103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Device performance characterization and modeling of recombination current in CdTe/CdS pn junction diodes
A comprehensive model of pn junction diode behaviour based on Shockley-Read-Hall (SRH) recombination theory is presented and been successfully applied to a large number CdTe photovoltaic cells in the 10%-15% efficiency range. The model accounts for the range of measured values of diode quality factor and reverse saturation current found in our devices as well as an observed relationship between these parameters.
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