非易失性SRAM单元

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346730

W. Wang, A. Gibby, Z. Wang, Tze Wee Chen, S. Fujita, P. Griffin, Y. Nishi, S. Wong

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引用次数: 56

摘要

提出了一种具有两个备用非易失性存储器件的非易失性SRAM单元。这种新颖的单元提供非易失性存储，从而允许在运行期间关闭SRAM的选定块。没有禁区点球。预计会有轻微的性能损失

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Nonvolatile SRAM Cell

A nonvolatile SRAM cell with two back-up nonvolatile memory devices is proposed. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty. A slight performance penalty is anticipated

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来源期刊

2006 International Electron Devices Meeting

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