直接测量杂质定位引起的V/sub /波动

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852800

Tetsu Tanaka, Tatsuya Usuki, Y. Momiyama, Toshihiro Sugii

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引用次数: 17

摘要

本文研究了源边缘信道杂质的局部波动。我们的直接测量成功地分离了局部(fet内)和全局(fet间)因素。相当局部区域(/spl Lt/L/sub - eff//spl倍/W/sub - eff/)在高V/sub - d/时显著影响V/sub - th/分布，在最小的mosfet中超过全局因子。局部波动不可避免地影响SRAM单元中的mosfet，即使通过工艺优化减小了全局波动。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Direct measurement of V/sub th/ fluctuation caused by impurity positioning

This paper studies a local fluctuation of channel impurity on the source edge. Our direct measurement successfully separates the local (intra-FET) and global (inter-FET) factors. The quite local region (/spl Lt/L/sub eff//spl times/W/sub eff/) significantly affects V/sub th/ distribution in a high V/sub d/, which exceeds the global factor in the smallest MOSFETs. The local fluctuation inevitably affects MOSFETs in SRAM cells even though global fluctuation is reduced by process optimization.

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来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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