栅极驱动和块驱动电流镜像拓扑的比较

2016 IEEE 19th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS) Pub Date : 2016-04-20 DOI:10.1109/DDECS.2016.7482457

Matej Rakus, V. Stopjaková, D. Arbet

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引用次数: 14

摘要

本文介绍了采用90纳米CMOS技术设计的栅极驱动和块体驱动电流镜的不同拓扑结构。由于传统的MOS晶体管可以作为体积驱动器件工作，因此不需要对现有的MOSFET结构或技术过程进行任何修改。体积驱动的电流反射镜能够在低至标准MOS器件的阈值电压的电源下工作。在主要特性和输出特性方面，将块驱动的电流镜像拓扑与栅极驱动的等效拓扑进行了比较。实验结果表明，体积驱动设计技术在超低电压模拟集成电路领域具有广阔的应用前景。

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Comparison of gate-driven and bulk-driven current mirror topologies

In this paper, different topologies of gate-driven and bulk-driven current mirrors designed in 90 nm CMOS technology are presented. Since the conventional MOS transistors can work as a bulk-driven device, there is no need for any modification of the existing MOSFET structure or technology process. The bulk-driven current mirror is capable of operating at power supplies down to the threshold voltage of a standard MOS device. Bulk-driven current mirror topologies were compared to their gate-driven equivalents in terms of main properties and output characteristics. The achieved results prove that the bulk-driven design technique is very promising towards ultra low-voltage analog ICs.

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2016 IEEE 19th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)

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