S. Suchalkin, G. Belenky, M. Ermolaev, B. Laikhtman, G. Kipshidze, D. Smirnov, S. Moon, T. Valla, S. Svensson, W. Sarney
{"title":"基于变质InAsSb的量子材料","authors":"S. Suchalkin, G. Belenky, M. Ermolaev, B. Laikhtman, G. Kipshidze, D. Smirnov, S. Moon, T. Valla, S. Svensson, W. Sarney","doi":"10.1109/rapid.2019.8864362","DOIUrl":null,"url":null,"abstract":"Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual substrate approach on the other hand removes this limitation thus opening a way to design SLs and QWs with non-generic electronic properties including Dirac carrier dispersion and topologically nontrivial states.","PeriodicalId":143675,"journal":{"name":"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum Materials Based on Metamorphic InAsSb\",\"authors\":\"S. Suchalkin, G. Belenky, M. Ermolaev, B. Laikhtman, G. Kipshidze, D. Smirnov, S. Moon, T. Valla, S. Svensson, W. Sarney\",\"doi\":\"10.1109/rapid.2019.8864362\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual substrate approach on the other hand removes this limitation thus opening a way to design SLs and QWs with non-generic electronic properties including Dirac carrier dispersion and topologically nontrivial states.\",\"PeriodicalId\":143675,\"journal\":{\"name\":\"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/rapid.2019.8864362\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/rapid.2019.8864362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bandgap and carrier dispersion in superlattices (SL) based on InAsSb can be precisely controlled by variation of the layer composition and width. However, when grown strain-balanced on GaSb, possible SL designs are seriously limited. The virtual substrate approach on the other hand removes this limitation thus opening a way to design SLs and QWs with non-generic electronic properties including Dirac carrier dispersion and topologically nontrivial states.
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