{"title":"微波等离子体增强MOCVD生长GaN","authors":"R. Sani, M. Barmawi, P. Arifin, Sugianto","doi":"10.1109/COMMAD.1998.791622","DOIUrl":null,"url":null,"abstract":"Thin films of GaN on SI-GaAs and SnO/sub 2/ substrates were successfully grown by Microwave Plasma enhanced MOCVD at substrate temperatures in the vicinity of 650/spl deg/C. These temperatures are substantially lower than the growth temperature of GaN using a conventional MOCVD, which is in excess of 1000/spl deg/C. Trimethylgallium and nitrogen were used as precursors. A plasma applicator was used to create the nitrogen plasma, which was delivered from the cavity to the place near the substrate hearer using a quartz tube. X-ray diffraction measurements were revealed that the grown layer is a hexagonal structure. A Hall-van der Pauw technique was employed to measure the electrical properties. As grown material, room temperature resistivity, mobility, and carrier concentration are 36 /spl Omega//spl middot/cm, 73 cm/sup 2//V/spl middot/s, and 4.6/spl times/10/sup 15/ cm/sup -3/ respectively. Photoluminescence measurements were performed using a He-Cd laser emitting at 325 nm at different the temperatures. Luminescence, centered at 2.9 eV were clearly observed. Meanwhile the UV absorption spectrum showed a band-gap of around 3.4 eV.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth of GaN by microwave plasma enhanced MOCVD\",\"authors\":\"R. Sani, M. Barmawi, P. Arifin, Sugianto\",\"doi\":\"10.1109/COMMAD.1998.791622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin films of GaN on SI-GaAs and SnO/sub 2/ substrates were successfully grown by Microwave Plasma enhanced MOCVD at substrate temperatures in the vicinity of 650/spl deg/C. These temperatures are substantially lower than the growth temperature of GaN using a conventional MOCVD, which is in excess of 1000/spl deg/C. Trimethylgallium and nitrogen were used as precursors. A plasma applicator was used to create the nitrogen plasma, which was delivered from the cavity to the place near the substrate hearer using a quartz tube. X-ray diffraction measurements were revealed that the grown layer is a hexagonal structure. A Hall-van der Pauw technique was employed to measure the electrical properties. As grown material, room temperature resistivity, mobility, and carrier concentration are 36 /spl Omega//spl middot/cm, 73 cm/sup 2//V/spl middot/s, and 4.6/spl times/10/sup 15/ cm/sup -3/ respectively. Photoluminescence measurements were performed using a He-Cd laser emitting at 325 nm at different the temperatures. Luminescence, centered at 2.9 eV were clearly observed. Meanwhile the UV absorption spectrum showed a band-gap of around 3.4 eV.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thin films of GaN on SI-GaAs and SnO/sub 2/ substrates were successfully grown by Microwave Plasma enhanced MOCVD at substrate temperatures in the vicinity of 650/spl deg/C. These temperatures are substantially lower than the growth temperature of GaN using a conventional MOCVD, which is in excess of 1000/spl deg/C. Trimethylgallium and nitrogen were used as precursors. A plasma applicator was used to create the nitrogen plasma, which was delivered from the cavity to the place near the substrate hearer using a quartz tube. X-ray diffraction measurements were revealed that the grown layer is a hexagonal structure. A Hall-van der Pauw technique was employed to measure the electrical properties. As grown material, room temperature resistivity, mobility, and carrier concentration are 36 /spl Omega//spl middot/cm, 73 cm/sup 2//V/spl middot/s, and 4.6/spl times/10/sup 15/ cm/sup -3/ respectively. Photoluminescence measurements were performed using a He-Cd laser emitting at 325 nm at different the temperatures. Luminescence, centered at 2.9 eV were clearly observed. Meanwhile the UV absorption spectrum showed a band-gap of around 3.4 eV.